Ease on Three-dimensional Memory & Logic Solutions. FS2 pioneers atomic-scale 2D semiconductor technology for low energy-consumption, cost, and latency computing.
Wafer-scale MoS2, WSe2 growth
3D sequential integration technology
Thermal budget management for BEOL
The faster compute, more energy dilemma. AI needs efficiency—global data center power consumption will reach 945 TWh by 2030. Silicon alone cannot keep up beyond 2030.
FS2 develops "atomic" 2D semiconductors (WSe₂, MoS₂) that enable monolithic 3D integration at just <400°C—compatible with legacy IC infrastructure.
As AI models grow exponentially, the gap between compute speed and memory bandwidth widens every year. This is the Memory Wall — and it's becoming the defining bottleneck of the AI era.
LLMs evolve far faster than hardware — the gap is widening, not closing
Data moves constantly between distant memory and logic, draining power
Silicon alone cannot solve this — a fundamentally new architecture is needed
Monolithic 3D integration places memory and logic in a single chip stack
Ultra-short interconnects mean near-zero latency and a fraction of the power cost
2D materials enable this stacking at low temperature — compatible with existing fabs
FS2 is building the technology to break the Memory Wall — enabling the next generation of AI chips that are faster, denser, and radically more efficient.
Breaking the thermal barrier with low-temperature growth ready for monolithic integration.
Wafer-scale MoS2, WSe2 growth
3D sequential integration technology
Thermal budget management for BEOL
World-class experts in 2D materials, semiconductor physics, and deep-tech commercialization.
Co-CEO & Co-Founder
KAIST Ph.D. · Led FEOL Process Dev. for GAA 3nm Node · 10 yrs semiconductor
Co-CEO & Co-Founder
UCLA Ph.D. · ~100 papers (Nature, Science) · Citation >10,000 · >10 yrs semiconductor
COO
MIT Ph.D. · Chip Integration & Memory Dev. · 4× Samsung Best Paper Award · >6 yrs Memory
Director of R&D
UV LED Commercialization · LG Innotek Inventor Award · LG Best Product Award · >10 yrs MOCVD
Director of Engineering
KAIST Ph.D. · 2.5D Chip Process Dev. (BEOL, TSV) · >10 yrs semiconductor
Process Engineer
Korea Univ. M.S. · Materials Sci. & Eng. · 5 yrs semiconductor & research
Process Engineer
Kyung Hee Univ. B.S. · Materials Sci. & Eng.
Advisor
Professor (USC) · DARPA Program Manager · 3D Integration Expert
Advisor
Assoc. Professor (MIT) · IBM Master Inventor · Device Expert · Key Technique Inventor
Advisor
Assoc. Professor (UVA) · Circuit Expert
For those daring to innovate. Join us in pioneering the next generation of semiconductor technology.
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